Your guide to Silicon Carbide Power Modules
Supplied by Semikron on Wednesday, 03 July, 2024
This application note provides an introduction to silicon carbide (SiC) MOSFET devices in industrial power semiconductor modules. It is targeted towards users familiar with silicon (Si) power semiconductors (primarily IGBTs) and explores next-gen power modules which presently include the devices with the following characteristics:
·n-type, enhancement-mode, MOSFETs
·planar or trench gate
·blocking voltage 650…1700V
·drain current >20A
The Ultimate Guide to Pallet Labelling
This paper examines the uses of SSCC labelling, its benefits, the issues with incorrect...
Food adulteration and authenticity testing
Learn how to confirm the quality and integrity of your product in the various stages of your food...
F&B processing tips for all-out competitive advantage
Learn how to instil a culture of quality that permeates across every point in your value...

