Your guide to Silicon Carbide Power Modules
Supplied by Semikron on Wednesday, 03 July, 2024
This application note provides an introduction to silicon carbide (SiC) MOSFET devices in industrial power semiconductor modules. It is targeted towards users familiar with silicon (Si) power semiconductors (primarily IGBTs) and explores next-gen power modules which presently include the devices with the following characteristics:
·n-type, enhancement-mode, MOSFETs
·planar or trench gate
·blocking voltage 650…1700V
·drain current >20A
Related White Papers
Hidden energy savings: how your pumps can save you money - an eBook
Unseen, and these days often unheard, pumps are at the very heart of most industrial...
Elevate your backup generation testing practices to achieve a new standard of preparation
Discover a new approach to testing, designed to realistically simulate the conditions of a...
The ultimate guide to automated product inspection
To remain competitive, Australian manufacturers need to guarantee excellent quality whilst...
