Your guide to Silicon Carbide Power Modules
Supplied by Semikron on Wednesday, 03 July, 2024
This application note provides an introduction to silicon carbide (SiC) MOSFET devices in industrial power semiconductor modules. It is targeted towards users familiar with silicon (Si) power semiconductors (primarily IGBTs) and explores next-gen power modules which presently include the devices with the following characteristics:
·n-type, enhancement-mode, MOSFETs
·planar or trench gate
·blocking voltage 650…1700V
·drain current >20A
Related White Papers
The greatest inventory mistakes you may not know you are making
The 5 biggest inventory management fails and how...
Be ready for changing tastes - a new approach to plant software
This white paper explores a new platform approach to dealing with the challenging dilemma in...
Energy saving solutions for food and beverage manufacturers
Material handling machinery can lose over 50% efficiency through your electromechanic drive...
