Your guide to Silicon Carbide Power Modules
Supplied by Semikron on Wednesday, 03 July, 2024
This application note provides an introduction to silicon carbide (SiC) MOSFET devices in industrial power semiconductor modules. It is targeted towards users familiar with silicon (Si) power semiconductors (primarily IGBTs) and explores next-gen power modules which presently include the devices with the following characteristics:
·n-type, enhancement-mode, MOSFETs
·planar or trench gate
·blocking voltage 650…1700V
·drain current >20A
Related White Papers
How to cut your F&B production downtime — an eBook
Read this eBook for tips on executing a smart enterprise asset management strategy that...
Food processing made easy with new miniature photoelectric sensors
Learn about the latest photoelectric sensors for...
Advanced lactose detection for lactose-free products
Learn how to improve the execution of lactose analysis in your quality control laboratory...
