Your guide to Silicon Carbide Power Modules
Supplied by Semikron on Wednesday, 03 July, 2024
This application note provides an introduction to silicon carbide (SiC) MOSFET devices in industrial power semiconductor modules. It is targeted towards users familiar with silicon (Si) power semiconductors (primarily IGBTs) and explores next-gen power modules which presently include the devices with the following characteristics:
·n-type, enhancement-mode, MOSFETs
·planar or trench gate
·blocking voltage 650…1700V
·drain current >20A
Related White Papers
Understanding what GFSI is and how you become certified
Wondering what GFSI is and how to get certified?...
Industrial track and trace: RFID or vision ID - what's best?
Track and trace technologies are designed to identify issues or inconsistency early in the...
How Integrated Program and Lifecycle Management enables the future of F&B production
Learn about a focused approach to delivering your new initiatives, innovating and...
