Your guide to Silicon Carbide Power Modules

Supplied by Semikron on Wednesday, 03 July, 2024

This application note provides an introduction to silicon carbide (SiC) MOSFET devices in industrial power semiconductor modules. It is targeted towards users familiar with silicon (Si) power semiconductors (primarily IGBTs) and explores next-gen power modules which presently include the devices with the following characteristics:

·n-type, enhancement-mode, MOSFETs

·planar or trench gate

·blocking voltage 650…1700V

·drain current >20A

Related White Papers

Increase your yield by 20% without increasing energy consumption

Valio, a Finnish dairy farmer, implemented humidity controls into their food manufacturing...

Technology optimising the production line: an eBook

Only now is technology good enough that production lines can start to think for themselves....

How investing in innovative packaging solutions can raise the bar for sustainability

Discover the emerging trends in F&B packaging....

Content from other channels on our network

The air receiver registration duty most sites don't know they have

Death of 25-year-old crushed against steel frame leads to $630K in fines

2.8m fall lands building and maintenance company $390,000 fine

AI system seeks to prepare firefighters for megafire conditions

Opinion: Beyond the survey — what psychosocial risk management is becoming

Engineers Australia supports national engineer registration

Asahi to use recycled material for all plastic soft drink bottles

Queensland Government and CSIRO launch free R&D program for SMEs

Applications open in WA for submarine sustainment contracts

Construction begins on WA gallium project

Rapid blood test can detect iron deficiency in minutes

Scientists uncover how cancer cells hide from immune system

DKSH brings Bioyond Robotics' lab automation products Down Under

Nanoscale measurement error corrected

Immunologist wins GSK Award for respiratory virus research

All content Copyright © 2026 Westwick-Farrow Pty Ltd