Your guide to Silicon Carbide Power Modules

Supplied by Semikron on Wednesday, 03 July, 2024

This application note provides an introduction to silicon carbide (SiC) MOSFET devices in industrial power semiconductor modules. It is targeted towards users familiar with silicon (Si) power semiconductors (primarily IGBTs) and explores next-gen power modules which presently include the devices with the following characteristics:

·n-type, enhancement-mode, MOSFETs

·planar or trench gate

·blocking voltage 650…1700V

·drain current >20A

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