Your guide to Silicon Carbide Power Modules

Supplied by Semikron on Wednesday, 03 July, 2024

This application note provides an introduction to silicon carbide (SiC) MOSFET devices in industrial power semiconductor modules. It is targeted towards users familiar with silicon (Si) power semiconductors (primarily IGBTs) and explores next-gen power modules which presently include the devices with the following characteristics:

·n-type, enhancement-mode, MOSFETs

·planar or trench gate

·blocking voltage 650…1700V

·drain current >20A

Related White Papers

Food safety and compliance with high performance weighing and inspection

This guide offers know-how in 16 different areas where weighing and foreign body control help you...

Keeping compressed air to food production standards

Compressed air used in food and beverage manufacturing must be kept to food production...

How to cut your F&B production downtime — an eBook

Read this eBook for tips on executing a smart enterprise asset management strategy that...

Content from other channels on our network

Optics11 Life appoints Jacquelien ten Dam as CEO

Epilepsy pioneer elected President of Aust Academy of Science

Babies of stressed mothers likely to get their teeth earlier

Customised immune cells used to fight brain cancer

MRI scanner to advance medical breakthroughs at Monash

2026 Thought Leaders: Jimmy Martin

Vaxxas secures TGA licence to manufacture vaccine patch technology

DroneShield nabs another European military contract

Daikin Australia opens new Sydney factory

AR3 to be first to process rare earths at ANSTO's new pilot facility

How does capacity for work change before and after psychiatric treatment?

Arm amputation after machinery entanglement lands quarry $100K fine

South Australia to reduce height limitation of high-risk construction work

Five ways to reduce fire risk of lithium-ion batteries in healthcare settings

Bricklaying company has fall fine more than tripled on appeal

All content Copyright © 2026 Westwick-Farrow Pty Ltd